By Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon

This e-book presents complete assurance of the fabrics features, method applied sciences, and machine operations for reminiscence field-effect transistors utilising inorganic or natural ferroelectric skinny motion pictures. This transistor-type ferroelectric reminiscence has fascinating basic machine physics and most likely huge commercial effect.  

Among many of the functions of ferroelectric skinny movies, the advance of nonvolatile ferroelectric random entry reminiscence (FeRAM) has improved so much actively because the overdue Eighties and has completed modest mass construction degrees for particular purposes due to the fact that 1995. There are kinds of reminiscence cells in ferroelectric nonvolatile stories. One is the capacitor-type FeRAM and the opposite is the field-effect transistor (FET)-type FeRAM. even supposing the FET-type FeRAM claims final scalability and nondestructive readout features, the capacitor-type FeRAMs were the most curiosity for the key semiconductor reminiscence businesses, as the ferroelectric FET has deadly handicaps of cross-talk for random accessibility and brief retention time.

This booklet goals to supply readers with the advance background, technical matters, fabrication methodologies, and promising purposes of FET-type ferroelectric reminiscence units, featuring a complete assessment of earlier, current, and destiny applied sciences. the subjects mentioned will bring about extra advances in large-area electronics carried out on glass or plastic substrates in addition to in traditional Si electronics.

The publication consists of chapters written via best researchers in ferroelectric fabrics and similar machine applied sciences, together with oxide and natural ferroelectric skinny films.

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